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VR 1.0
PT J
AU Gamernyk, RV
   Gnatenko, YP
   Bukivskij, PM
   Skubenko, PA
   Slivka, VY
TI Optical and photoelectric spectroscopy of photorefractive Sn2P2S6
   crystals
SO JOURNAL OF PHYSICS-CONDENSED MATTER
LA English
DT Article
ID ELECTRIC-FIELD
AB Low-temperature studies of the absorption, photoluminescence,
   photodiffusion and photoconductivity spectra of Sn2P2S6 crystals were
   carried out in the wide spectral range 0.8-3.5 eV. The position of
   defect energy levels relative to the crystal energy bands has been
   determined. It was shown that the photoionization transitions from the
   valence band to the level with the energy E-v + 1.35 eV are caused by
   the presence of the hole metastable state. In the optical and
   photoelectric spectra several bands were revealed with energy greater
   than the band gap of the crystal (E-g = 2.5 eV). It was established
   that these bands are caused by the optical transitions between the
   valence band and upper conduction bands. It was shown that the
   electron-hole recombination, caused by the band-to-band transitions
   with the participation of the upper conduction subbands, is fast and
   corresponds to the nanosecond region. The combined scheme of the defect
   energy level and the band-to-band electronic phototransitions in
   Sn2P2S6 crystals was constructed. A mechanism for the photorefractive
   effect in these crystals is proposed.
C1 NAS Ukraine, Inst Phys, UA-03028 Kiev, Ukraine.
   Lviv Natl Univ, UA-29005 Lvov, Ukraine.
RP Gnatenko, YP, NAS Ukraine, Inst Phys, 46 Prospect Nauky, UA-03028 Kiev,
   Ukraine.
EM gnatenko@iop.kiev.ua
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NR 17
TC 0
PU IOP PUBLISHING LTD
PI BRISTOL
PA DIRAC HOUSE, TEMPLE BACK, BRISTOL BS1 6BE, ENGLAND
SN 0953-8984
J9 J PHYS-CONDENS MATTER
JI J. Phys.-Condes. Matter
PD JUN 14
PY 2006
VL 18
IS 23
BP 5323
EP 5331
PG 9
SC Physics, Condensed Matter
GA 057JR
UT ISI:000238592600006
ER

PT J
AU Guarino, A
   Jazbinsek, M
   Herzog, C
   Degl'Innocenti, R
   Poberaj, G
   Gunter, P
TI Optical waveguides in Sn2P2S6 by low fluence MeV He+ ion implantation
SO OPTICS EXPRESS
LA English
DT Article
ID REFRACTIVE-INDEX PROFILES; INFRARED WAVELENGTHS; PHASE-CONJUGATION;
   KNBO3; MODES
AB Planar waveguides in nonlinear optical crystals of Sn2P2S6 have been
   produced by He+ ion implantation. The effective indices of the
   waveguide have been determined and refractive index profiles have been
   evaluated for the indices along all three principal axes of the optical
   indicatrix. The depth of the induced optical barrier is. Delta n(1) = -
   0.07, Delta n(2) = - 0.07 and Delta n(3) = - 0.09 lambda = 0.633 mu m
   for a fluence Phi = 0.5 x 10(15) ions/cm(2). Propagation losses for
   hybrid-n(1) modes are alpha similar or equal to 10dB/cm. (c) 2006
   Optical Society of America.
C1 ETH, Inst Quantum Elect, Nonlinear Opt Lab, CH-8093 Zurich, Switzerland.
RP Guarino, A, ETH, Inst Quantum Elect, Nonlinear Opt Lab, CH-8093 Zurich,
   Switzerland.
EM guarino@phys.ethz.ch
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   GUARINO A, 2005, OPT LETT, V18, P2412
   HAERTLE D, 2005, OPT EXPRESS, V13, P2047
   HAERTLE D, 2005, OPT EXPRESS, V13, P3765
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NR 15
TC 0
PU OPTICAL SOC AMER
PI WASHINGTON
PA 2010 MASSACHUSETTS AVE NW, WASHINGTON, DC 20036 USA
SN 1094-4087
J9 OPT EXPRESS
JI Opt. Express
PD MAR 20
PY 2006
VL 14
IS 6
BP 2344
EP 2358
PG 15
SC Optics
GA 024NR
UT ISI:000236202800037
ER

EF